▎ 摘　　要

NOVELTY - Preparing gallium nitride homogenous substrate comprises (i) preparing polycrystalline gallium nitride substrate, and coating metal gallium film with thickness of 10-100 nm on surface of substrate, and ammoniating to form gallium film ammoniated layer on metal gallium film, (ii) amorphizing substrate to convert gallium film ammoniated layer into amorphous layer with thickness of 3-120 nm, (iii) transferring two-dimensional film with thickness of 2-50 nm on amorphous layer, (iv) ammonifying two-dimensional film, (v) depositing AlN buffer layer with thickness of 20-50 nm on two-dimensional film after ammoniating treatment, (vi) growing gallium nitride film on AlN buffer layer, and (vii) removing polycrystalline gallium nitride substrate to obtain gallium nitride homogenous substrate. USE - The method is useful for preparing gallium nitride homogenous substrate. ADVANTAGE - The method: utilizes transferable single crystal graphene on gallium nitride substrate, which provides required hexagonal template for nitride growth; lowers thermal expansion stress of transferring two-dimensional thin films, which increases growth space of HVPE gallium nitride thick film and greatly reduces cost of obtaining gallium nitride self-supporting substrates. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for gallium nitride homogenous substrate, prepared by above method.