▎ 摘　　要

NOVELTY - The semiconductor device (1) has a semiconductor substrate (3) which is made of silicon carbide doped with vanadium. The source and drain electrodes (4,5) are provided with monolayer of epitaxial graphene (11). A current channel provided between source and drain electrodes is formed on the semiconductor substrate. An ionic liquid is applied on the semiconductor substrate. The doping concentrations in N-type region (14) is set to 1011-1020 atoms per cm3. The vertical thickness of N-type region is set between 150 microns and 5 nm. USE - Semiconductor device e.g. epitaxial graphene FET. Can also be used in bipolar transistor and MOSFET. ADVANTAGE - The semiconductor device can be manufactured easily. The electrical properties such as charge carrier mobility and load bearing capacity of the semiconductor device can be improved. The conductivity of the current channel can be controlled by applying voltage at the gate electrode. The charge carriers can be injected easily on the electrodes. DESCRIPTION OF DRAWING(S) - The drawings show the sectional views of the semiconductor device. Semiconductor device (1) Semiconductor substrate (3) Source electrode (4) Drain electrode (5) Monolayer of epitaxial graphene (11) N-type region (14)