▎ 摘　　要

NOVELTY - Forming an opening using a mask comprises: forming a mask on a feature layer; forming a first opening in the mask to expose a portion of the feature layer; forming a carbon layer on the mask and the exposed portion of the feature layer; and removing portions of the carbon layer and a portion of the exposed portion of the feature layer to form a second opening in the feature layer. The mask comprises doped carbon. The feature layer comprises silicon, germanium, silicon germanium, silicon oxide, aluminum oxide, silicon oxide nitride or silicon nitride. The feature layer comprises a metal. The carbon layer comprises a graphene layer. The carbon layer comprises many graphene layers. USE - The method is useful for forming an opening using a mask (claimed), which is used to manufacture semiconductor i.e. NAND flash memory. ADVANTAGE - The method: achieves performance improvements at reduced power and smaller footprint than conventional two-dimensional processes; and reduces profile issues, e.g. bowing, top faceting or tapering, of the opening in the feature layer.