▎ 摘　　要

NOVELTY - The structure (100) has a source electrode (112) in electrical contact with a channel layer (106) through doped semiconductor material. A drain electrode (114) is spaced apart from the source electrode and placed in contact with the channel layer. A top gate electrode and a bottom gate electrode are configured to apply electric field across the layer in direction perpendicular to a plane of the layer. The channel material is selected from a group consisting of few-layer graphene, two-dimensional semiconductor or topological material, where the material has a staggered honeycomb lattice structure. USE - Electronic structure e.g. low-voltage field-effect transistor, for use in an electrical device (claimed), such as switches for low-power applications. ADVANTAGE - The structure reduces sub-threshold swing in topological transistor devices to reduce power dissipation and improve efficiency of the device. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: a method for operating a structure an electrical device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a topological quantum field effect transistor. 100Topological quantum field effect transistor 102Top gate 104Bottom gate 106Channel layer 108Ferroelectric layers 112Source electrode 114Drain electrode