▎ 摘　　要

NOVELTY - The method involves forming an isolation oxidation silicon layer (2) on silicon substrate (1). A grate electrode material (4) is filled in the oxidation slot of oxidation silicon layer. The heat oxidation process is performed with respect to grate electrode material for forming thin layer silicon oxidation layer. The source electrode (501) and leakage electrode (502) are formed with grate electrode contact hole. A graphene thin film or black phosphorus thin film (6) is formed on the substrate and patterning process of the thin film is performed. USE - Preparation method of self-alignment graphene-black phosphorus transistor structure. ADVANTAGE - The self-alignment graphene-black phosphorus transistor structure is prepared efficiently. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of self-alignment graphene-black phosphorus transistor structure. Silicon substrate (1) Isolation oxidation silicon layer (2) Grate electrode material (4) Graphene thin film or black phosphorus thin film (6) Source electrode (501) Leakage electrode (502)