▎ 摘　　要

NOVELTY - The LED (20) has a semiconductor epitaxial layer comprising an active layer (130) located between first and second semiconductor layers (120, 140). A first electrode (150) is electrically connected with the second semiconductor layer. A second electrode (160) is electrically connected with the first semiconductor layer. A graphene layer (110) is located between the active layer and the first semiconductor layer, and comprises apertures and a graphene film consisting of a layer of continuous carbon atoms. A thickness of the graphene layer is in a range from 1 nanometer to 100 micrometers. USE - Vertical structure LED for use as a light source in an optical imaging system e.g. display and projector. ADVANTAGE - The LED allows the apertures in the graphene layer and microstructures to be sufficiently small and extracting direction of light to be changed by grooves of a patterned depression and the graphene layer such that the light can be extracted from the LED, thus improving light extraction efficiency of the LED. The graphene layer can be directly formed on the substrate so as to grow a semiconductor epitaxial layer in a simple and cost-effective manner. The LED allows the microstructures to be formed on the semiconductor epitaxial layer by using the graphene layer as a mask layer, thus avoiding any complex etching process. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an LED. LED (20) Graphene layer (110) Semiconductor layers (120, 140) Active layer (130) Electrodes (150, 160)