• 专利标题:   Preparation of two-dimensional hexagonal boron nitride/graphene composite hybrid film, involves placing substrate in ion beam sputter deposition system, annealing substrate, introducing methane and argon, growing film, and cooling.
  • 专利号:   CN111607775-A
  • 发明人:   MENG J, ZHANG X, CHENG L, YIN Z, WU J
  • 专利权人:   INST SEMICONDUCTORS CHINESE ACAD SCI
  • 国际专利分类:   C23C014/02, C23C014/06, C23C014/46
  • 专利详细信息:   CN111607775-A 01 Sep 2020 C23C-014/46 202081 Pages: 8 Chinese
  • 申请详细信息:   CN111607775-A CN10387175 09 May 2019
  • 优先权号:   CN10387175

▎ 摘  要

NOVELTY - Preparation of two-dimensional hexagonal boron nitride/graphene composite hybrid film, involves preparing a substrate, placing the substrate in an ion beam sputter deposition system, pre-pumping the system with back bottom vacuum, heating and annealing the substrate in hydrogen atmosphere, closing hydrogen to make the chamber of the system recover to vacuum environment, introducing methane and argon gas into the chamber, using an ion source to generate argon ion beam bombardment sintered boron nitride target at the same time cracking methane so that boron, nitrogen and carbon atoms are deposited on the surface of the substrate, growing two-dimensional hybrid film, closing methane gas, and cooling. USE - Preparation of two-dimensional hexagonal boron nitride/graphene composite hybrid film. ADVANTAGE - The method prevents problems of unstable precursor, and improves controllability and film uniformity.