▎ 摘　　要

NOVELTY - The FET has a gate structure provided with a gate dielectric unit and a gate electrode. The gate electrode is arranged on the gate dielectric unit. The gate structure covers a graphene and carbon nanotube contact. A source electrode and a drain electrode are respectively located with two sides of the gate structure. The source electrode is fixed with an outer side of the graphene and carbon nanotube contact. The drain electrode is formed above a semiconductor carbon nano-tube that is fixed with a drain terminal. USE - Hetero-junction carbon nanotube FET. ADVANTAGE - The FET selects transistor source-drain metal to control polarity of the source and drain electrodes of a n-type field effect transistor. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a hetero-junction carbon nanotube FET manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a hetero-junction carbon nanotube FET.