▎ 摘　　要

NOVELTY - The optical sensor has semiconductor layer formed on the substrate. A first graphene layer is formed on the substrate and the semiconductor layer. A barrier layer is formed on the first graphene layer and includes insulator. A source electrode is formed on the first graphene layer and not electrically connected to the barrier layer. A drain electrode is formed on the semiconductor layer and not electrically connected to the first graphene layer. A second graphene layer is formed on the barrier layer. USE - Optical sensor for light detection in wide spectral range including infrared range. Used in various fields, e.g., image sensing, communication, and medical devices. ADVANTAGE - Manufactures optical sensor that does not require additional gate electrode and has high photo-reactivity and high specific detection ability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method for optical sensor. DESCRIPTION OF DRAWING(S) - The drawing shows the cross sectional view of the structure of the optical sensor. (Drawing includes non-English language text).