▎ 摘　　要

NOVELTY - Graphene production involves (i) forming a catalyst metal film (11) on a surface of a substrate (S), (ii) heating the catalyst metal film, and (iii) cooling the heated catalyst metal film, where the step (i) includes introducing carbons into the catalyst metal film. USE - Production of graphene used in ultrahigh speed switching device and high frequency device. ADVANTAGE - The method results in high quality graphene, since there is no need to dissolve carbon into catalyst metal film, which results in even diffusion of carbon, while suppressing the fluctuation in the amount of carbon introduced into the catalyst metal film. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) graphene production apparatus, which forms a catalyst metal film on the surface of the substrate, heats the catalyst metal film, and cools down the heated catalyst metal film, where the formation of the catalyst metal film involves introducing carbons into the catalyst metal film; and (2) graphene production system, which has processing chambers, where at least two of the processing chambers are configured as a metal formation chamber, for forming a catalyst metal film on the surface of the substrate and a graphene precipitation chamber for precipitating graphene in the surface of the catalyst metal film, where the metal film formation chamber is configured to allow carbons to be introduced into the catalyst metal film, when forming the catalyst metal film, and the graphene precipitation chamber is configured to heat the formed catalyst metal film and to cool down the heated catalyst metal film. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a test piece having a PVD nickel film. Titanium nitride film (10) PVD nickel film (11) Test piece (12) Graphene (16) Substrate (S)