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  • 专利标题:   Semiconductor device e.g. transistor, has second active area, graphene channel that is formed between first and second active areas, comprises first and second sides and first in-plane gate that is proximate to first side.
  • 专利号:   US2016043235-A1, KR2016019345-A, US9525072-B2, CN106206680-A, KR1716938-B1
  • 发明人:   LIN M, LIN S, LEE S, LIN M Y, LIN S Y, LEE S C, LI S
  • 专利权人:   TAIWAN SEMINCONDUCTOR MFG CO LTD, UNIV TAIWAN NAT, TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD, LIN S
  • 国际专利分类:   H01L029/16, H01L029/423, H01L029/49, H01L029/786, C01B031/04, H01L029/72, H01L029/66, H01L029/10
  • 专利详细信息:   US2016043235-A1 11 Feb 2016 H01L-029/786 201614 English
  • 申请详细信息:   US2016043235-A1 US455992 11 Aug 2014
  • 优先权号:   US455992

▎ 摘　　要

NOVELTY - The device (100) has substrate. A first active area (106) is formed over the substrate. A second active area (108) is formed over the substrate. A graphene channel (110) is provided between the first active area and the second active area. The graphene channel comprises a first side (112) and a second side (114). A first in-plane gate is proximate to the first side. The first active area, the second active area, or the first in-plane gate comprises graphene, gold, copper or nickel. The substrate comprises silicone. The dielectric layer comprises silicone oxide. graphene. USE - Semiconductor device such as transistor. ADVANTAGE - The replacement of the first in-plane gate, the second in-plane gate, the first active area, or the second active area with graphene simplifies the fabrication process for the semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows the top down view of a semiconductor device. Semiconductor device (100) First active area (106) Second active area (108) Graphene channel (110) First side (112) Second side (114)