• 专利标题:   Forming graphene material on surface by implanting carbon into metal material layer disposed on substrate so that graphene forms on top and bottom surfaces of the layer, removing the graphene on the top, and then removing the layer.
  • 专利号:   US2012258587-A1, US8501531-B2
  • 发明人:   KUB F J, ANDERSON T, FEYGELSON B N
  • 专利权人:   US SEC OF NAVY
  • 国际专利分类:   B05D003/02, B82Y040/00, C23C014/48, C23C016/26, H01L021/283, H01L051/40
  • 专利详细信息:   US2012258587-A1 11 Oct 2012 H01L-021/283 201270 Pages: 31 English
  • 申请详细信息:   US2012258587-A1 US441425 06 Apr 2012
  • 优先权号:   US472752P, US441425

▎ 摘  要

NOVELTY - Forming graphene material on surface involves depositing metal material layer on material substrate; forming a desired concentration of carbon in the metal material layer to form carbon-containing metal material; applying heating/cooling cycle to the carbon-containing metal material layer; cooling the annealed carbon-containing metal material layer to precipitate graphene material; removing graphene material from top surface of the metal material layer; and removing the metal material layer without removing the graphene material. USE - For forming graphene material on a surface (claimed) used, as gate materials in a transistor or vertical conducting channels in a vertical transistor. ADVANTAGE - The method forms graphene directly on a surface without having to use the conventional approach of forming a graphene material layer on a second substrate and then transferring the graphene from the second substrate to a first substrate. DETAILED DESCRIPTION - Forming graphene material on a surface, involves forming a material substrate; depositing a metal material layer on the material substrate, the metal material layer having a bottom surface in contact with the material substrate and further having top surface not in contact with the material substrate; forming a desired concentration of carbon in the metal material layer to form a carbon-containing metal material; applying a heating/cooling cycle to the carbon-containing metal material layer to diffuse the carbon within the metal material; cooling the annealed carbon-containing metal material layer to precipitate a first graphene material (GM) onto the bottom surface of the metal material and further to precipitate a second graphene material (GM2) onto the top surface of the metal material; removing GM2 from the top surface of the metal material layer; and removing the metal material layer without removing the GM; where the GM remains on the surface of the material substrate. DESCRIPTION OF DRAWING(S) - The figure shows method for forming a vertical graphene material structure.