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  • 专利标题:   Manufacture of porous nanostructure graphene film involves evaporating thin metal on graphene, forming membrane-type metal layer and particle shape metal layer, heat-treating and etching.
  • 专利号:   KR2012081935-A, KR1325575-B1
  • 发明人:   BEOM Y J, HYEOK L G, U KIM S, KIM S W, LEE K H, YOO J B
  • 专利权人:   UNIV SUNGKYUNKWAN RES BUSINESS FOUND, UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   B82B003/00, C01B031/02, C23C016/06
  • 专利详细信息:   KR2012081935-A 20 Jul 2012 C01B-031/02 201314 Pages: 10
  • 申请详细信息:   KR2012081935-A KR145045 28 Dec 2011
  • 优先权号:   KR136493

▎ 摘　　要

NOVELTY - Thin metal is evaporated on a graphene and a membrane-type metal layer is formed. Particle shape metal layer is formed on the graphene under vacuum by thermal process. The contact portion of heat-treated graphene and metal layer is etched under ambient environment by thermal process. Thus, porous nanostructure graphene film is obtained. USE - Manufacture of porous nanostructure graphene film. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for measuring standard reduction potential of graphene.