▎ 摘　　要

NOVELTY - The device has a flexible substrate (1) arranged on an upper part of a graphene layer (2). The graphene layer is provided with a p-type group II-VI semiconductor nano wire part (3) and an n-type group II-VI semiconductor nano wire part (4). The n-type group II-VI semiconductor nano wire part (4) is provided with a polymethyl methacrylate insulation layer (5). An upper part of the polymethyl methacrylate insulation layer is arranged with an aluminum electrode (6). A side of the graphene layer is covered with a gold/titanium electrode (7). The substrate is made of poly ethylene terephthalate. USE - Graphene based II-VI group semiconductor axial direction p-n nano line array and flexible photoelectron device. ADVANTAGE - The device increases density and ductility of an inorganic flexible electronic device. DETAILED DESCRIPTION - The p-type group II-VI semiconductor nano wire part and the n-type group II-VI semiconductor nano wire part are made of zinc selenide, zinc sulfide, zinc telluride, cadmium selenide, cadmium sulfide and cadmium telluride. An INDEPENDENT CLAIM is also included for a graphene based II-VI group semiconductor axial direction p-n nano line array flexible photoelectron device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a graphene based ii-vi group semiconductor axial direction p-n nano line array and flexible photoelectron device. Flexible substrate (1) Graphene layer (2) P-type group II-VI semiconductor nano wire part (3) N-type group II-VI semiconductor nano wire part (4) Polymethyl methacrylate insulation layer (5) Aluminum electrode (6) Gold/titanium electrode (7)