• 专利标题:   Flexible solar cell has highly doped gallium arsenide contact layer that is formed between gallium arsenide solar cell epitaxial structure and graphene layer that forms ohmic contact with gallium arsenide solar cell epitaxial structure.
  • 专利号:   CN111276550-A
  • 发明人:   HUANG X, LU S, LONG J, LI X, WANG H
  • 专利权人:   NANOTECH NANOBIONICS CHINESE ACADEMY
  • 国际专利分类:   H01L031/0224, H01L031/0687, H01L031/18
  • 专利详细信息:   CN111276550-A 12 Jun 2020 H01L-031/0224 202052 Pages: 10 Chinese
  • 申请详细信息:   CN111276550-A CN11094127 11 Nov 2019
  • 优先权号:   CN11094127

▎ 摘  要

NOVELTY - The solar cell has a gallium arsenide solar cell epitaxial structure whose first and second surfaces are arranged with a first electrode and a second electrode. The first surface and the second surface are opposite to each other. The first electrode is a fully transparent electrode including a graphene layer. A highly doped gallium arsenide contact layer is formed between the gallium arsenide solar cell epitaxial structure and the graphene layer. The graphene layer forms an ohmic contact with the gallium arsenide solar cell epitaxial structure through the gallium arsenide contact layer. USE - Flexible solar cell. ADVANTAGE - The flexible solar cell uses the graphene layer as the first electrode of the gallium arsenide solar cell, thus the first electrode effectively improve the current collecting ability of the electrode, reduces the series resistance, reduces the shading loss, and helps the gallium arsenide solar cell to obtain more high open circuit voltage, short circuit current and photoelectric conversion efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of flexible solar cell. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the forward-growing gallium arsenide multi-junction solar cell epitaxial wafer. (Drawing includes non-English language text)