▎ 摘　　要

NOVELTY - The layer structure comprises a first material layer (30). A diffusion barrier layer (32) on the first material layer. A conductive material layer on the diffusion barrier layer. An insulating layer covers an outside surface of the diffusion barrier and the conductive material layer. The edge of the diffusion barrier layer is substantially aligned with an edge of the conductive material layer. The edge of the diffusion barrier and the conductive material layer directly contact with the insulating layer. The diffusion barrier layer has a nanocrystalline graphene (nc-G) layer and the nc-G layer has a size less than hundred nanometres (nm) and a ratio (D/G) of D-band to G-band that is greater than one and a ratio (2D/G) of 2D-band to G-band that is less than one. USE - Layer structure for use in diffusion barrier layer and a nanocrystalline graphene layer applied to an electronic device, such as memory devices or logic devices. ADVANTAGE - The layer structure having a diffusion barrier layer that reduces resistance increment according to a critical dimension reduction and prevents an unnecessary material from diffusing into peripheral regions. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of the layer structure having a diffusion barrier layer. First Material Layer (30) Diffusion Barrier Layer (32) Second Material Layer (34)