• 专利标题:   Manufacturing graphene atomic layer used for manufacturing electronic component, involves etching graphene and irradiating graphene with energy source, where graphene is equipped with one or more layers.
  • 专利号:   KR2016111049-A
  • 发明人:   LEE Y T
  • 专利权人:   LEE Y T
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   KR2016111049-A 26 Sep 2016 C01B-031/04 201677 Pages: 14
  • 申请详细信息:   KR2016111049-A KR035667 16 Mar 2015
  • 优先权号:   KR035667

▎ 摘  要

NOVELTY - Manufacturing graphene atomic layer involves etching graphene and irradiating graphene with the energy source, where graphene is equipped with one or more layers in which the self-assembled monomolecular membrane mask is equipped. The self-assembled monomolecular membrane mask in the graphene surface is equipped with one or more layers. USE - Method for manufacturing graphene atomic layer used for manufacturing electronic component (claimed). ADVANTAGE - The method enables to manufacture graphene atomic layer that minimizes damage of the substrate.