• 专利标题:   Obtaining material deposited on substrate by plasma-assisted chemical vapor deposition used as component of window or touch panel and as component in protection system, involves forming one or more graphene layers.
  • 专利号:   WO2016203083-A1, ES2597477-A1, ES2597477-B1, EP3312137-A1, EP3312137-A4
  • 发明人:   MUNOZ GOMEZ R, GARCIA HERNANDEZ M D M, GOMEZALEIXANDRE FERNANDEZ C, GOMEZ R, HERNANDEZ M D M, FERNANDEZ C, MUNOZ G R, GARCIA H M D, GOMEZALEIXANDRE F C
  • 专利权人:   CONSEJO SUPERIOR INVESTIGACIONES CIENTIF
  • 国际专利分类:   B82Y030/00, B82Y040/00, C01B031/02, C23C016/50, C01B032/182, C01B032/05, C09D001/00
  • 专利详细信息:   WO2016203083-A1 22 Dec 2016 C01B-031/02 201705 Pages: 32 Spanish
  • 申请详细信息:   WO2016203083-A1 WOES070451 15 Jun 2016
  • 优先权号:   ES030864, WOES070451

▎ 摘  要

NOVELTY - Obtaining material deposited on substrate by plasma-assisted chemical vapor deposition involves forming one or more graphene layers which comprise nano-crystals interconnected by amorphous phase. The substrate is placed inside a vacuum chamber under a pressure of less than or equal to 10-4 millibar under atmosphere of argon and hydrogen. The substrate is heated to 400-700 degrees C. The plasma is activated and carbon source is added into the vacuum chamber for less than or equal to 60 minutes to obtain sample formed by the substrate and the deposited precursor material. The obtained sample is heated to 30-100 degrees C. USE - Method for obtaining material deposited on substrate by plasma-assisted chemical vapor deposition used as component of window or touch panel, as component in protection system, as electrode component in lithium batteries, fuel cells or sensors, as component of hard disk drive or hard disk drive, as corrosion resistant coating for metals and stainless steel substrates, and as component of resistive heater or heater (all claimed). DETAILED DESCRIPTION - Obtaining material deposited on substrate by plasma-assisted chemical vapor deposition involves forming one or more graphene layers which comprise nano-crystals interconnected by amorphous phase. The substrate is placed inside a vacuum chamber under a pressure of less than or equal to 10-4 millibar under atmosphere of argon and hydrogen. The substrate is heated to 400-700 degrees C. The plasma is activated and carbon source is added into the vacuum chamber for less than or equal to 60 minutes to obtain sample formed by the substrate and the deposited precursor material. The obtained sample is heated to 30-100 degrees C. The plasma is deactivated and sample is cooled.