• 专利标题:   Forming a conductive material nanogap used in macromolecule translocation device, involves providing a base material, applying conductive material sheet to first layered material, applying two conducting electrodes to material sheet, applying passivation layer over etch mask, and fabricating hole.
  • 专利号:   US2022326214-A1
  • 发明人:   POSTMA H
  • 专利权人:   UNIV CALIFORNIA STATE NORTHRIDGE
  • 国际专利分类:   C12Q001/6869, G01N027/327, G01N033/487
  • 专利详细信息:   US2022326214-A1 13 Oct 2022 G01N-033/487 202291 English
  • 申请详细信息:   US2022326214-A1 US176371 16 Feb 2021
  • 优先权号:   US976948P, US176371

▎ 摘  要

NOVELTY - Forming a conductive material nanogap involves providing base material, which comprises micropore that extends through first layered material, and micropore comprises top opening, bottom opening and volume boundary. The conductive material sheet is applied to first layered material, where conductive material sheet covers the top opening of micropore, and two conducting electrodes are applied to conductive material sheet, so that each one of conducting electrodes is positioned on side of micropore. The mask that is applied that covers at least a portion of conductive material sheet, top opening of micropore, or its combination, and then passivation layer is applied over at least the etch mask. The hole is fabricated in passivation layer directly above the top opening of micropore, and at least one voltage pulse is applied through at least one conducting electrode to create a nanogap in conductive material sheet, where nanogap is over and open to the top opening of the micropore. USE - Method for forming a conductive material nanogap used in macromolecule translocation device (claimed). ADVANTAGE - The method forms a conductive material nanogap, which is automatically formed over the freely suspended section, has required geometry and critical dimension, and controls size of thinnest mechanically cantilevered component to inhibit mechanical fluctuation of contemplated device. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: a nanogap in a conductive material sheet comprises a top side and a bottom side and comprises a width; a macromolecule translocation device, comprises nanogap, where device is a nonlinear conductor; and a method for forming a conductive material nanogap by providing a base material, applying a conductive material sheet to the base material, applying two conducting electrodes to the conductive material sheet, applying an etch mask that covers the at least one conducting electrode and at least a portion of the conductive material sheet to form a second layered material, applying a second insulating layer to the second layered material to form a third layered material, fabricating a micropore in the third layered material, and simultaneously fabricating a nanogap in the conductive material sheet, where nanogap is smaller in diameter than the micropore.