▎ 摘　　要

NOVELTY - The detector has a graphene infrared photoelectric transistor having a channel comprising a graphene quantum point, where the channel comprises silicon dioxide/silicon. The graphene quantum point comprises a single layer or double-layer graphene thin film that is formed by high oriented pyrolytic graphite. A colloid quantum dot layer is formed on a light control top gate of the graphene infrared photoelectric transistor. USE - Graphene far infrared ray detector for high property graphite alkenyl infrared focal plane array sensor. ADVANTAGE - The photoelectric transistor has infrared light absorption rate, high internal quantum efficiency, gain and low noise level, and uses different colloid quantum dot layer material according to different uses of the detected infrared wavelength range. The detector has optical and electrical adjustable characteristic, compatible complementary metal oxide semiconductor (CMOS) integrated circuit process, large scale production and low cost sensor. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene far infrared ray detector preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene far infrared ray detector. '(Drawing includes non-English language text)'