• 专利标题:   Transparent conductive layer for semiconductor LED, has carbon nano-tube layer formed with P-type gallium nitride layer that is formed on graphene layer, where graphene layer is covered on carbon nano-tube layer.
  • 专利号:   CN202736965-U
  • 发明人:   ZHOU W, LIU R, ZHANG J
  • 专利权人:   HC SEMITEK CORP
  • 国际专利分类:   H01L033/42
  • 专利详细信息:   CN202736965-U 13 Feb 2013 H01L-033/42 201341 Pages: 6 Chinese
  • 申请详细信息:   CN202736965-U CN20338044 12 Jul 2012
  • 优先权号:   ZCN20338044

▎ 摘  要

NOVELTY - The conductive layer has a carbon nano-tube layer formed with a P-type gallium nitride (P-GaN) layer. The P-type gallium nitride layer is formed on a graphene layer. The graphene layer is covered on the carbon nano-tube layer. The carbon nano-tube layer is formed with a graphene-containing layer i.e. composite layer. USE - Transparent conductive layer for a semiconductor LED (claimed). ADVANTAGE - The conductive layer has better flexibility, high heat conducting performance and high electrical conductivity, and improves LED utilization performance.