▎ 摘　　要

NOVELTY - The detector has an oxide layer (2) arranged on a substrate (1). A pair of electrodes (3) is mounted with the oxide layer in parallel direction. A semiconductor conducting channel (4) is connected with the electrodes. A surface of the semiconductor conducting channel is modified with a nitrate detecting group layer (5). The semiconductor conducting channel is provided with a reduced graphene oxide conducting channel for preparing the graphene oxide conducting channel by deposition and vacuum thermal reducting process. The nitrate detecting group layer is provided with benzyl triethyl ammonium chloride solution that is coated on the surface of the semiconductor conducting channel. USE - Semiconductor resistor-type nitrate ion detector. ADVANTAGE - The detector has high sensitivity, and realizes nitrate ion capturing and detecting process by a current signal and current signal change generating process, reduces graphene oxide semiconductor channel surface carrier concentration change by electronic effect and detecting limit and increases quick detecting speed rate. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a semiconductor resistor-type nitrate ion detector. Substrate (1) Oxide layer (2) Electrodes (3) Semiconductor conducting channel (4) Nitrate detecting group layer (5)