▎ 摘　　要

NOVELTY - In-situ atmosphere effect epitaxial growing of graphene on surface of large-diameter hydrogen/hydrogen-silicon carbide (4H/6H-SiC) substrate comprises taking 4H/6H-SiC substrate, polishing surface, cleaning, setting in graphite crucible, setting in single crystal growth furnace, placing silicon powder or silicon carbide powder, vacuumizing, heating, flowing argon gas and hydrogen gas, controlling pressure, subliming or decomposing, etching, growing, closing hydrogen gas source, continuously passing argon gas, controlling pressure, heating, keeping temperature and completely growing graphene. USE - Method for in-situ atmosphere effect epitaxial growing of graphene on surface of large-diameter 4H/6H-SiC substrate (claimed) used for electronics field. ADVANTAGE - The graphene has improved shape, homogeneity and migration rate. DETAILED DESCRIPTION - In-situ atmosphere effect epitaxial growing of graphene on surface of large-diameter hydrogen/hydrogen-silicon carbide (4H/6H-SiC) substrate comprises taking 4H/6H-SiC substrate with diameter 2-4 in, polishing surface, cleaning to roughness of less than 0.3 nm, flatness of less than 5 mu m and thickness of 300-400 mu m, setting in graphite crucible, setting in tray of single crystal growth furnace, placing 0.1-1 g silicon powder or silicon carbide powder inside periphery position or bottom center of substrate wafer, vacuumizing furnace to (1-2)x 10-7 mbar, heating to 1400-1700 degrees C at heating speed of 10-50 degrees C/minute, flowing high-purity argon gas and hydrogen gas at argon gas flow rate of 10-100 standard cubic centimeters per minute (sccm) and hydrogen gas flow rate of 10-100 sccm, controlling pressure at 800-900 mbar, completely subliming or decomposing silicon powder or silicon carbide powder, hydrogen etching for 30-80 minutes, growing, closing hydrogen gas source, continuously passing argon gas, controlling pressure at 800-900 mbar, heating to 1500-1800 degrees C at heating speed of 10-50 degrees C/minute, keeping temperature for 30-80 minutes and completely growing graphene.