▎ 摘　　要

NOVELTY - The method involves fabricating an epitaxial structure that includes a channel layer and a barrier layer formed on the channel layer, and a two-dimensional electron gas is formed between the aluminum gallium nitride barrier layer and the channel layer. The two-dimensional material passivation layer is epitaxially grown on the barrier layer. A dielectric layer is formed on the two-dimensional material passivation layer. The source electrode and the drain electrode are arranged on the barrier layer and electrically connected by the two-dimensional electron gas, and the gate electrode is arranged on the dielectric layer and located between the source electrode and the drain electrode. The two-dimensional material passivation layer includes graphene, black phosphorus, graphitic carbon nitride, transition metal di-chalcogenides and layered double hydroxides combination. The material of the dielectric layer includes silicon nitride. USE - Method of manufacturing gallium nitride metal insulator semiconductor high electron mobility transistor (MISHEMT) device (claimed). ADVANTAGE - The two-dimensional hBN is grown after the GaN HEMT epitaxial structure is grown to serve as a surface passivation layer, then the dielectric layer is deposited again, the surface damage can be blocked, the surface hanging key is shielded, the interface state density is reduced, and then the current collapse effect is effectively inhibited, so that the device obtains better direct current characteristics and dynamic characteristics.