▎ 摘　　要

NOVELTY - Preparing silicon doped graphene comprises (i) placing graphene in a furnace tube and evacuating at 10-5-105 Pa; (ii) passing protective gas through the inner furnace tube and heating to 600-2300 degrees C at a rate of 1-300 degrees C/minute, then passing silane before reaching the reaction temperature with a flow rate of 1-1000 standard cubic centimeters per minute, reacting for 1-2880 minutes and stopping the flow of silane; and (iii) cooling at the rate of 1-500 degrees C/minute and collecting the reaction product. USE - The silicon doped graphene is useful in micro-nano device (claimed). ADVANTAGE - The method is simple and ensures easy operation.