• 专利标题:   Preparing silicon doped graphene useful in micro-nano device, comprises placing graphene in a furnace tube, evacuating, passing protective gas through the inner furnace tube and heating, passing silane, reacting and cooling.
  • 专利号:   CN104591168-A
  • 发明人:   CHEN H, LIN S, LI X, XU W, XU Z, WANG P, WU Z, ZHANG C, ZHONG H
  • 专利权人:   UNIV ZHEJIANG
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN104591168-A 06 May 2015 C01B-031/04 201555 Pages: 8 Chinese
  • 申请详细信息:   CN104591168-A CN10021264 16 Jan 2015
  • 优先权号:   CN10021264

▎ 摘  要

NOVELTY - Preparing silicon doped graphene comprises (i) placing graphene in a furnace tube and evacuating at 10-5-105 Pa; (ii) passing protective gas through the inner furnace tube and heating to 600-2300 degrees C at a rate of 1-300 degrees C/minute, then passing silane before reaching the reaction temperature with a flow rate of 1-1000 standard cubic centimeters per minute, reacting for 1-2880 minutes and stopping the flow of silane; and (iii) cooling at the rate of 1-500 degrees C/minute and collecting the reaction product. USE - The silicon doped graphene is useful in micro-nano device (claimed). ADVANTAGE - The method is simple and ensures easy operation.