▎ 摘　　要

NOVELTY - Chemical vapor deposition (CVD) device comprises base (1), a reaction chamber (2), air extracting pump (3), a controller (36), an air supply mechanism, reaction mechanism and multiple support legs (4). The multiple support legs is circumferentially uniformly distributed on the periphery of the reaction chamber. The reaction chamber fixed on the upper part of the base through the pin. The controller fixed on one of the legs. The controller provided with a programmable logic controller (PLC). The air supply mechanism located at the upper part of the base. The reaction mechanism set in the reaction chamber. The air pump fixed on the upper part of the air extracting chamber. The air pump electrically connected with the PLC. The reaction mechanism comprises a lifting component, the lifting platform, a fastening component, the substrate and an electromagnetic coil, the lifting component and the lifting platform. The fastening component and the substrate are set in turn from up to down. USE - The device is useful for preparing graphene with full uniformity (claimed). ADVANTAGE - The device increases yield of graphene is increased, and improves practicality of the device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the chemical vapor deposition device. Base (1) Reaction chamber (2) Air extracting pump (3) Multiple support legs (4) Controller (5)