▎ 摘　　要

NOVELTY - The detector has an indium gallium arsenide (InGaAs) absorption layer formed on a substrate and graphene layer, which is provided with a buffer layer. A pin photo detector structure is formed by expanding the buffer layer, where the InGaAs absorption layer is made of metal organic compound. The graphene layer is made of organic compound material. The buffer layer is made of silicon (Si)-doped ternary material, where thickness of the buffer layer is 1 to 2 microns. The graphene is a single layer or multiple layers P-type graphite. USE - Graphene-reinforced-type InGaAs infrared detector. ADVANTAGE - The detector has wide infrared detecting range, low dark current and convenient control, and avoids mismatch dislocation, and is suitable for the back light inlet, and is wide in application prospect, and increases performance of AlGaN-based detector. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene-reinforced-type indium gallium arsenide infrared detector.'(Drawing includes non-English language text)'