▎ 摘　　要

NOVELTY - The device has a first insulating layer (13) on an underlying layer (11). A first trench (14a) is formed in the first insulating layer. A first graphene layer (23a) is provided in the first trench. The first trench has a bottom surface on the underlying and two side surfaces are joined to the bottom surface that forms into a U-shape. The first graphene layer has a stacked structure with multiple graphene sheets. Each graphene sheet includes a depression in a central portion. The portions of the graphene sheets located in an edge of the first graphene layer are each extended upward. USE - Semiconductor device e.g. integrated circuit. ADVANTAGE - The contact resistance and the electrical resistance are reduced as the end of the second contact/via and the edges of the first graphene layers are connected directly to each other. The variation in characteristics between the graphene sheets that are included in the first and second graphene layers is reduced and is easily enabled to obtain desired electrical characteristics. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a semiconductor device. Underlying layer (11) First insulating layer (13) First trench (14a) First graphene layer (23a) Second contact (26)