▎ 摘　　要

NOVELTY - The method comprises growing graphene (3) on a surface of a catalyst (1) such as liquid metal or liquid alloy using gaseous and/or solid carbon source through chemical vapor deposition, or growing graphene on the surface of the catalyst and an interface of the catalyst contacting with a non-metallic insulating material substrate (2). A melting point of the metal or alloy is lower than 500 degrees C, and the boiling temperature is higher than 1000 degrees C. A growth temperature of the graphene is 500-1500 degrees C. The chemical vapor deposition comprises heating the catalyst and the substrate. USE - The method is useful for growing graphene through chemical vapor deposition. ADVANTAGE - The method is capable of simply growing the graphene with controllable layers and low requirements on the microstructure of substrate surface. DETAILED DESCRIPTION - The method comprises growing graphene (3) on a surface of a catalyst (1) such as liquid metal or liquid alloy using gaseous and/or solid carbon source through chemical vapor deposition, or growing graphene on the surface of the catalyst and an interface of the catalyst contacting with a non-metallic insulating material substrate (2). A melting point of the metal or alloy is lower than 500 degrees C, and the boiling temperature is higher than 1000 degrees C. A growth temperature of the graphene is 500-1500 degrees C. The chemical vapor deposition comprises heating the catalyst and the substrate to the growth temperature of the graphene, forming droplet or paving the catalyst on the surface of the substrate, introducing carrying gas such as argon having flow of 200-500 standard cubic centimeters per minute (SCCM), introducing hydrogen and introducing carbon source to the surface of the catalyst, decomposing, gasifying and making the carbon source to flow through the surface of the catalyst under the driving of the carrying gas, controlling carbon source flow by the heating temperature of the solid carbon source, growing graphene film by the carbon atoms on the droplet surface or the paved liquid surface under the effect of the catalyst or forming graphene film by the carbon atoms on the droplet surface or the paved liquid surface under the effect of the catalyst, forming graphene film by the carbon atoms on the substrate and the interface contacting with the catalyst through surface diffusion under the effect of the catalyst, and collecting graphene. A flow of the carbon source is 0.5-20 SCCM. Hydrogen is introduced to regulate quality and layers of the graphene, and the flow of the hydrogen is 1-30 SCCM. The growth time of the graphene is 10 seconds to 60 minutes. The step of collecting the graphene comprises removing catalyst on the surface of the substrate to separate the graphene and the catalyst, leaving the graphene on the surface of the substrate and then collecting the graphene, removing catalyst and superficial graphene on the interface of the substrate contacting with the catalyst to show the graphene on the substrate and then collecting the graphene, and absorbing and peeling the graphene on the surface of the liquid catalyst by the substrate having strong binding force with the graphene. The step of removing the catalyst on the surface of the substrate comprises heating the substrate to a temperature higher than the melting point of the catalyst, inclining the substrate to make the catalyst liquid flow away, and corroding the catalyst by the chemical solution. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a catalyst prepared on a surface of graphene (Drawing includes non-English language text). Catalyst (1) Substrate (2) Graphene. (3)