▎ 摘　　要

NOVELTY - The semiconductor device comprises a bilayer graphene comprising a first and a second adjacent graphene layer, a first electrically insulating layer contacting the first graphene layer, and an electrically insulating region (8) contacting the second graphene layer. The first electrically insulating layer comprises an electrically insulating material and 1-10 wt.% of a substance for creating free charge carriers of a first type in the first graphene layer. The electrically insulating region creates free charge carriers of a second type opposite to the first type in the second graphene layer. USE - The semiconductor device is useful as a FET (claimed). ADVANTAGE - The semiconductor device exhibits increased stability, efficient switching, good on-off ratio ( greater than or equal to 104), and increased charge density. DETAILED DESCRIPTION - The semiconductor device comprises a bilayer graphene comprising a first and a second adjacent graphene layer, a first electrically insulating layer contacting the first graphene layer, and an electrically insulating region (8) contacting the second graphene layer. The first electrically insulating layer comprises an electrically insulating material and 1-10 wt.% of a substance for creating free charge carriers of a first type in the first graphene layer. The electrically insulating region creates free charge carriers of a second type, opposite to the first type in the second graphene layer. The electrically insulating material: forms a homogeneous film; is polymer, a substance or a matrix within which the substance is dispersed; and is bound to the substance. The semiconductor device further comprises a first electrode coupled to the first electrically insulating layer, and/or a second electrode coupled to the electrically insulating region, a source electrode, a drain electrode, and a channel positioned between the source and drain electrodes. The electrically insulating material is chemically inert towards graphene. The first electrically insulating layer is a graphene oxide layer. The electrically insulating region has a relative permittivity of 3.9, and comprises a second electrically insulating layer bound to a dopant layer creating the free charge carriers of a second type in the second graphene layer. The dopant layer is a monolayer of molecules comprising electron donating or withdrawing groups for creating the free charge carriers of the second type. The molecules are grafted onto the second insulating layer. The free charge carriers of the first type are electrons, and the free charge carriers of the second type are holes. The electrically insulating material has a relative permittivity of 10. The channel includes bilayer graphene. An INDEPENDENT CLAIM is included for a method for manufacturing a semiconductor device. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a FET device. First layer (1) Bottom line (2) High-k layer (5) Electrically insulating region (8) Bottom conductive part. (12)