▎ 摘　　要

NOVELTY - The method involves pre-processing a substrate i.e. a polycrystalline silicon carbide substrate or a poly crystalline silicon substrate. An oxide film is deposited on the substrate to obtain a composite substrate. A single crystal film is deposited on the compound substrate. A graphene layer is formed on a surface of the single crystal film by performing a plasma etching process to obtain four-layered structure of sulfur-copper-Nickel layer. A single crystalline membrane removing process is performed to obtain a composite substrate structure. USE - Method for extending graphene on substrate. ADVANTAGE - The method enables avoiding the quality problem, damage and wrinkle problem of the graphene caused by the crystal boundary in the substrate based on pollution caused by graphene transfer process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a prepared by the method for extending graphene on substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating a method for extending graphene on a substrate. (Drawing includes non-English language text).