▎ 摘　　要

NOVELTY - The method involves forming a semiconductor layer containing a light-emitting layer on a layer containing the graphene. The semiconductor layer is processed to form a light-emitting element (150) including a light-emitting surface on a layer containing the graphene and a top surface opposite to the light emitting surface. The first insulating film (112) is formed. The second insulating film (156) is formed for covering the layer containing the graphene and the light emitting element. The first via (161d) which penetrates the first insulating film and the second insulating film is covered. The second wiring layer (160) is formed on the second insulating film. The first via is provided between the first wiring layer and the second wiring layer. The first wiring layer (110) and the second wiring layer are electrically connected. The light emitting element includes a gallium nitride compound semiconductor. USE - Manufacturing method of image display device for semiconductor device (all claimed). Uses include but are not limited to computer display, TV, portable terminal such as smartphone or car navigation system. ADVANTAGE - The transfer process of a light emitting element is shortened and the yield is improved. The miniaturization of the light emitting element is made possible, and a high definition image display device is realized. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: an image display device; and a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the sub-pixel of image display device. 110First wiring layer 112First insulating film 150Light-emitting element 156Second insulating film 160Second wiring layer 161dFirst via