▎ 摘　　要

NOVELTY - The device (100) has a quantum dot layer arranged between n-type graphene layer (110) and p-type graphene layer (150), an provided with a n-type quantum dot layer (120) and a P-type quantum dot layer (140). The n-type graphene layer and the p-type graphene layer are separated from each other. A boron nitride layer is provided between n-type graphene layer and p-type graphene layer. USE - Quantum dot light emitting device. ADVANTAGE - Since the boron nitride layer is provided between n-type graphene layer and p-type graphene layer, the light efficiency of the light emitting device can be improved. The efficiency of the quantum dot light emitting device can be increased. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the manufacturing method of the quantum dot light emitting device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the quantum dot light emitting device. Quantum dot light emitting device (100) N-type grapheme layer (110) N-type quantum dot layer (120) P-type quantum dot layer (140) P-type grapheme layer (150)