▎ 摘　　要

NOVELTY - The device has a ferroelectric layer placed below an electrode, where the ferroelectric layer is composed of multi-element oxide material with ferroelectric. A channel layer is arranged below the ferroelectric layer, where the channel layer is composed of a conductive material that is controlled by the ferroelectric to change resistance. The perovskite type oxide material with ferroelectric includes any one of barium titanate, lead zirconate titanate, bismuth ferrite and lead titanate. The conductive material of the channel layer capable of being controlled by the ferroelectrics to change the resistance includes any one selected from the group consisting of molybdenum disulfide, graphene lanthanum-strontium-manganese-oxygen graphene, n-type silicon and p-type silicon. The perovskite oxide material for the substrate includes a strontium titanate. USE - Three-terminal device for simulating biological nerve synapses. ADVANTAGE - The synaptic three-terminal device based on ferroelectric domain inversion changes its own resistance value according to external stimulus, so that the device can simulate nerve synapse. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a three-terminal device.