• 专利标题:   Manufacture of graphene involves supplying process gas containing carbon source on substrate, and pre-processing substrate using oxidative gas plasma to form graphene layer on substrate.
  • 专利号:   KR2014005470-A, KR1381008-B1
  • 发明人:   CHUN S H, KIM Y S
  • 专利权人:   UNIV SEJONG IND ACAD COOP GROUP
  • 国际专利分类:   B01J019/12, C01B031/02, H01L021/033
  • 专利详细信息:   KR2014005470-A 15 Jan 2014 C01B-031/02 201417 Pages: 18
  • 申请详细信息:   KR2014005470-A KR072730 04 Jul 2012
  • 优先权号:   KR072730

▎ 摘  要

NOVELTY - Manufacture of graphene involves supplying process gas containing carbon source on substrate, and pre-processing the substrate using oxidative gas plasma to form graphene layer on substrate. USE - Manufacture of graphene (claimed).