▎ 摘　　要

NOVELTY - The switch has a base layer (1) arranged with an insulating silicon layer. An upper layer of the base layer is arranged with a silicon dioxide layer (2). A metal electrode end (3) is located on two ends of the silicon dioxide layer. A vertical metal strip (4) is arranged with the silicon dioxide layer and a horizontal graphene grating part (5). A signal input end (7) is located above a metal layer. A signal output end (8) is arranged below a base layer, where opening and closing performance of a tunable terahertz switch is realized when the bias voltage is increased by 0.5 to 1.5eV and a transmittance of a terahertz device is diminished from 99.5% to 17.5%. The horizontal graphene grating part is made of graphene. USE - Dual-grating tunable switch. ADVANTAGE - The switch has compact structure and simple manufacturing function, and can improve terahertz switch control performance by applying bias voltage. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a dual-grating tunable switch. Base layer (1) Silicon dioxide layer (2) Metal electrode end (3) Vertical metal strip (4) Horizontal graphene grating part (5) Signal input end (7) Signal output end (8)