• 专利标题:   Forming graphene thin films/functionalized graphene coatings, comprises providing conducting substrate and electrophoretically forming graphene or functionalized graphene using solution comprising e.g. exfoliated graphene sheets.
  • 专利号:   WO2011159922-A2, WO2011159922-A3, US2013156678-A1, US10343916-B2
  • 发明人:   BANERJEE S, WHITTAKER L, LEE V, WHITAKER L
  • 专利权人:   UNIV NEW YORK STATE RES FOUND, BANERJEE S, LEE V, WHITAKER L, UNIV NEW YORK STATE RES FOUND, BANERJEE S, WHITAKER L
  • 国际专利分类:   C01B031/02, C25D013/02, C01B031/04, C25D013/00, B82Y030/00, B82Y040/00, C25D013/18, C25D013/22, C01B032/23, C01B032/182, C01B032/19, C01B032/192
  • 专利详细信息:   WO2011159922-A2 22 Dec 2011 C01B-031/02 201204 Pages: 49 English
  • 申请详细信息:   WO2011159922-A2 WOUS040740 16 Jun 2011
  • 优先权号:   US355290P, US13704054

▎ 摘  要

NOVELTY - Forming graphene thin films or functionalized graphene coatings, comprises providing a conducting substrate; and electrophoretically forming the graphene or functionalized graphene using a solution comprising exfoliated graphene sheets or exfoliated functionalized graphene sheets, so that a thin film of graphene or functionalized graphene is formed on the substrate. USE - The method is useful for forming graphene thin films or functionalized graphene coatings. ADVANTAGE - The method provides the graphene thin films, which: are free of detectible pin-hole defects; has less than or equal to 1%/unit area defects/cm2, or has less than or equal to 3% impurities, in which the surface contamination with extraneous impurities is limited to less than or equal to 3% surface coverage; and can cover a continuous area of at least 16 square inches. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene or functionalized graphene thin film, where the thin film is free of detectible pin-hole defects.