• 专利标题:   Graphene-polycrystalline silicon composite for forming e.g. conductor, is aggregate of several unit crystals formed using polycrystalline silicon, and has structure in which graphene is arranged at boundaries between unit crystals.
  • 专利号:   WO2018208086-A1, KR2018123774-A, KR1965055-B1
  • 发明人:   LIM Y S
  • 专利权人:   UNIV PUKYONG NAT
  • 国际专利分类:   C01B032/182, C01B033/02, H01B001/04, H01L031/0256, H01L051/00
  • 专利详细信息:   WO2018208086-A1 15 Nov 2018 C01B-032/182 201881 Pages: 21
  • 申请详细信息:   WO2018208086-A1 WOKR005346 10 May 2018
  • 优先权号:   KR057873

▎ 摘  要

NOVELTY - A graphene-polycrystalline silicon composite is an aggregate of several unit crystals formed using polycrystalline silicon, and has a structure in which graphene is arranged at grain boundaries between unit crystals. USE - Graphene-polycrystalline silicon composite is used for forming conductor and substrate (all claimed) for solar cell. ADVANTAGE - The graphene-polycrystalline silicon composite has excellent charge-transfer property and interface-controlling effect. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for production of graphene-polycrystalline silicon composite, which involves mixing a silicon powder and an oxidized graphene powder in a dispersion solvent, adding a reducing agent to the mixture of silicon powder and oxidized graphene powder for preparing a mixed powder, and sintering the mixed powder. A reduced graphene oxide is coated on the surface of the silicon powder.