• 专利标题:   Method for processing graphene quantum dots used as photoelectric materials, involves providing initial graphene quantum dots which is etched by using hydrogen, in presence of catalyst.
  • 专利号:   CN113912050-A
  • 发明人:   QIU J
  • 专利权人:   TCL TECHNOLOGY GROUP CORP
  • 国际专利分类:   B82Y020/00, B82Y030/00, C01B032/194, C09K011/65
  • 专利详细信息:   CN113912050-A 11 Jan 2022 C01B-032/194 202223 Chinese
  • 申请详细信息:   CN113912050-A CN10655920 09 Jul 2020
  • 优先权号:   CN10655920

▎ 摘  要

NOVELTY - Method for processing graphene quantum dots involves providing initial graphene quantum dots which is etched by using hydrogen, in presence of a catalyst. USE - As photoelectric materials. ADVANTAGE - The environmentally safe processing method removes sp 3 in the graphene quantum dots to improve the conductivity of the graphene quantum dots. The problem of agglomeration of graphene quantum dot material in the treatment process is avoided, and conductivity, quantum efficiency and the luminous purity of the graphene quantum dot material are improved. The photoelectric property of the graphene quantum dot material is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the graphene quantum dot. DESCRIPTION OF DRAWING(S) - The drawing shows schematic flow chart of a processing method of graphene quantum dots. (Drawing includes non-English language text). Above step (S01)