▎ 摘　　要

NOVELTY - Preparing ternary composite semiconductor materials comprises respectively dissolving graphene oxide rGO and graphitic carbon nitride (g-C3N4) powders in deionized water, then ultrasonic dispersing to obtain rGO and g-C3N4 suspension, then ultrasonically mixing the suspension of rGO and g-C3N4, then adding zinc nitrate hexahydrate, 0.1 M nitric acid and deionized water, stirring in water bath conditions, then adding thioacetamide (TAA), magnetic stirring, cooling to 0-5 degrees C in an ice bath, washing, centrifuging and drying. USE - The method is useful for preparing ternary composite semiconductor materials (claimed). ADVANTAGE - The materials have physical and chemical properties of the original material, also promotes the rapid transfer of electrons and improve photocatalytic activity. DETAILED DESCRIPTION - Preparing ternary composite semiconductor materials comprises respectively dissolving graphene oxide rGO and graphitic carbon nitride (g-C3N4) powders in deionized water, then ultrasonic dispersing to obtain rGO and g-C3N4 suspension, then ultrasonically mixing the suspension of rGO and g-C3N4, then adding zinc nitrate hexahydrate, 0.1 M nitric acid and deionized water, stirring in water bath conditions, then adding thioacetamide (TAA), magnetic stirring, cooling to 0-5 degrees C in an ice bath, washing, centrifuging and drying, where the ternary composite semiconductor material is rGO/g-C3N4/ZnS ternary composite semiconductor material, the reduced graphite graphene nanosheet supports the porous graphite-phase carbon nitride to form binary surface-to-surface contact, followed by spherical zinc sulfide loading on the surface of the formed binary material.