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  • 专利标题:   Forming heterojunction structure used e.g. in material engineering, comprises providing graphene pattern on substrate, applying current to heat graphene pattern and forming two-dimensional material layer on graphene pattern.
  • 专利号:   US2018148338-A1, KR2018059331-A
  • 发明人:   YU Y, JUN Y Y
  • 专利权人:   ELECTRONICS TELECOM RES INST, ELECTRONICS TELECOM RES INST
  • 国际专利分类:   C01B032/184, H01B001/02, H01L021/20, C01B019/00, C01B032/182, C01G039/06, H01L021/02, H01L021/324, H01L029/16
  • 专利详细信息:   US2018148338-A1 31 May 2018 C01B-032/184 201838 Pages: 4 English
  • 申请详细信息:   US2018148338-A1 US792621 24 Oct 2017
  • 优先权号:   KR158638, KR043842

▎ 摘　　要

NOVELTY - Method for forming a heterojunction structure involves providing a graphene pattern on a substrate, applying a current to the graphene pattern to heat the graphene pattern and forming a two-dimensional material layer on the graphene pattern. USE - The method is useful for forming heterojunction structures used in material engineering and physics applications. ADVANTAGE - The method forms heterojunction structure of graphene and two-dimensional material with improved quality and yield and improved selectivity in simple manner.