1. 平台首页
  2. 国际专利信息
  • 专利标题:   Growing method of group III nitride substrate involves providing support substrate, forming graphene layer on surface of group III nitride semiconductor layer and forming group III nitride semiconductor layer on graphene layer.
  • 专利号:   CN102201503-A
  • 发明人:   CAI D, FAN Y, LIU Z, REN G, WANG J, XU G, XU K, ZHONG H
  • 专利权人:   SUZHOU NANOWIN SCI TECHNOLOGY CO LTD, SUZHOU INST NANOTECH NANOBIONICS
  • 国际专利分类:   H01L033/00, H01L033/04
  • 专利详细信息:   CN102201503-A 28 Sep 2011 H01L-033/00 201206 Pages: 6 Chinese
  • 申请详细信息:   CN102201503-A CN10078131 30 Mar 2011
  • 优先权号:   CN10078131

▎ 摘　　要

NOVELTY - A support substrate is provided, graphene layer is formed on the surface of group III nitride semiconductor layer on support substrate, group III nitride semiconductor layer (B) is formed on the surface of graphene layer. The surface of support substrate is group III nitride semiconductor layer (A). USE - Growing method of group III nitride substrate. ADVANTAGE - The method efficiently provides group III nitride substrate, by a simple method. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for group III nitride light emitting diode.