▎ 摘　　要

NOVELTY - Producing multilayer graphene, comprises (a) forming a catalytic metal layer on a substrate, and supplying carbon source into a reactor, (b) depositing a carbon thin film layer on the catalytic metal layer, (c) performing step (b) by repeating alternately, (d) forming a multilayer thin film by laminating the alternately repeated carbon thin film layer and the catalytic metal layer, (e) synthesizing graphene layer on the carbon thin film layer containing multilayer thin film by heat processing, and (f) selectively removing the catalytic metal layer of the multilayer thin film. USE - The method is useful for producing multilayer graphene (claimed). ADVANTAGE - The method reduces production cost and time, improves problem of physical damage of elements and materials in substrate, and prevents degradation of graphene. The multilayer graphene can be applied directly on semiconductor by wiring process without transfer process. DETAILED DESCRIPTION - Producing multilayer graphene, comprises (a) forming a catalytic metal layer (110) on a substrate (10) present in a reactor, and supplying carbon source into the reactor, (b) depositing a carbon thin film layer (210) on the catalytic metal layer by physical vapor deposition or atomic layer deposition, (c) performing step (b) by repeating alternately, (d) forming a multilayer thin film by laminating the alternately repeated carbon thin film layer and the catalytic metal layer, (e) synthesizing graphene layer on the carbon thin film layer containing multilayer thin film by heat processing the multilayer thin film, and (f) selectively removing the catalytic metal layer of the multilayer thin film. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of the multilayer graphene. Substrate (10) Catalytic metal layer (110) Carbon thin film layer (120)