• 专利标题:   Preparing structure having transition metal sulfide film, involves providing substrate, forming graphene layer on surface of substrate, and forming transition metal sulfide thin film on surface of graphene layer.
  • 专利号:   CN112522783-A, CN112522783-B
  • 发明人:   NI J, HUANG W, XUE C
  • 专利权人:   ATOMAN SHENZHEN SEMICONDUCTOR TECHNOLOGY CO LTD, ATOMAN SHENZHEN SEMICONDUCTOR TECHNOLOGY
  • 国际专利分类:   C30B028/14, C30B029/46, C30B025/18, H01L021/02
  • 专利详细信息:   CN112522783-A 19 Mar 2021 C30B-028/14 202136 Pages: 12 Chinese
  • 申请详细信息:   CN112522783-A CN11296337 18 Nov 2020
  • 优先权号:   CN11296337

▎ 摘  要

NOVELTY - Method for preparing structure having transition metal sulfide film, involves providing substrate, forming graphene layer on surface of substrate, and forming transition metal sulfide thin film on surface of graphene layer. USE - The method is used for preparing structure having transition metal sulfide film (claimed). ADVANTAGE - The method solves the problem of lattice mismatch between film and the substrate, and ensures most intrinsic properties of transition metal sulfide film and high quality transition metal sulfide film. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a structure with transition metal sulfide film comprising substrate, graphene layer and transition metal sulfide film laminated in sequence, where the structure is prepared by using above-mentioned method.