• 专利标题:   Preparing electron beam induced patterned graphene comprises forming by exposing a polymer doped with metal nanomaterials to electron beam scanning radiation.
  • 专利号:   CN110980704-A
  • 发明人:   WANG Z, LI N, JIANG H, ZHANG S, LIU C, JIANG C, LIU B
  • 专利权人:   CHINESE ACAD SCI HEFEI INST PHYS SCI
  • 国际专利分类:   C01B032/184
  • 专利详细信息:   CN110980704-A 10 Apr 2020 C01B-032/184 202034 Pages: 11 Chinese
  • 申请详细信息:   CN110980704-A CN11390975 30 Dec 2019
  • 优先权号:   CN11390975

▎ 摘  要

NOVELTY - Preparing electron beam induced patterned graphene comprises forming by exposing a polymer doped with metal nanomaterials to electron beam scanning radiation. USE - The method is useful for preparing electron beam induced patterned graphene. ADVANTAGE - The method: prepares graphene, which has excellent performance, simple operation and utilizes easily obtained raw materials, and can meets different requirements in electronic devices field, and is easy to popularize. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for electron beam induced patterned graphene, comprising patterned graphene including single layer of graphene, double-layer graphene, three-layer graphene, multi-layer graphene, porous graphene, doped graphene, graphene oxide, three-dimensional structure graphene, graphene metal composition material, graphene polymer composition, graphene metal oxide composition materials, graphene metal sulfide composition material, graphene metal carbide composition, and/or graphite.