▎ 摘　　要

NOVELTY - Preparation of short-channel semiconductor/graphene heterojunction photodetector involves growing monolayer continuous graphene on surface of copper foil, growing zinc sulfide (ZnS) nanowire, preparing graphene array by photolithography using oxygen plasma etching, transferring ZnS nanowires to graphene strip, selecting desired area by photolithography, plating gold film on region covered with single ZnS nanowire and graphene strip, removing ZnS nanowires using diluted sulfuric acid, fixing area by photolithography, and plating zinc selenide film on graphene strip located in gold gap. USE - Method for preparing short-channel semiconductor/graphene heterojunction photodetector (claimed). ADVANTAGE - The method has simple process, low cost, and good practical value. DETAILED DESCRIPTION - Preparation of short-channel semiconductor/graphene heterojunction photodetector comprises growing monolayer continuous graphene on surface of copper foil by introducing 20 sccm methane and 100 sccm cyclohexanone peroxide at 1050-1100 degrees C by chemical vapor deposition, transferring graphene to 300 nm silica (SiO2)/silicon (Si) substrate using poly(methyl methacrylate) (PMMA) carrier, annealing at 350-450 degrees C under 10 sccm hydrogen gas and 20 sccm argon for 1.5-2 hours, and removing PMMA carrier to complete seamless transfer of graphene; placing ceramic boat containing ZnS powder in center of quartz tube, placing silicon substrate covered with thin gold film on another ceramic boat downstream of quartz tube, and heating furnace to 1050-1150 degrees C while passing 200 sccm argon for 90-100 minutes to grow ZnS on substrate surface; preparing 5 mu m wide graphene array by photolithography using oxygen plasma etching, and transferring ZnS nanowires to graphene strip; and selecting desired area by photolithography, plating 18-20 nm thick gold film on region covered with single ZnS nanowire and graphene strip, removing ZnS nanowires covered with gold films using diluted sulfuric acid, fixing area by photolithography, and plating zinc selenide film on graphene strip located in gold gap.