• 专利标题:   Triboelectric type graphene-based touch sensor device for electronic equipment, has triboelectric for generating triboelectric potential by contact of friction material whose contact is detected based on current change in channel layer.
  • 专利号:   US2017322094-A1, KR2017126178-A, KR1824800-B1, US10006819-B2
  • 发明人:   KIM S W, KIM T H, KHAN U, RYU H J, CHOI S, KANG M, KIM D H, SEUNG W C, KIM S, HO K T, HAN J R, SEUNG C, KIM D, WAN C S
  • 专利权人:   UNIV SUNGKYUNKWAN RES BUSINESS FOUND, UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   G01L001/00, H01L029/16, H01L029/51, H01L029/66, H01L029/786, C01B031/04, G06F003/044
  • 专利详细信息:   US2017322094-A1 09 Nov 2017 G01L-001/00 201778 Pages: 18 English
  • 申请详细信息:   US2017322094-A1 US587004 04 May 2017
  • 优先权号:   KR056245

▎ 摘  要

NOVELTY - The device has a gate dielectric layer (50) formed in partial contact with an electrode layer (30) and a graphene channel layer, and source and drain electrodes (60, 70) formed on opposing ends of the graphene channel layer. A triboelectric layer (40) is formed on the electrode layer, where the triboelectric layer generates triboelectric potential by contact of an external friction material, and contact of the external friction material is detected based on current change in the graphene channel layer due to the triboelectric potential applied to the graphene channel layer. USE - Triboelectric type graphene-based touch sensor device for use in an electronic equipment. ADVANTAGE - The device ensures that current characteristic of the graphene is changed by the gate bias applied to the graphene, thus enabling touch sensing in reliable manner as triboelectric effect always occurs regardless of whether the external contact material is conductive. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a graphene-based touch sensor device. DESCRIPTION OF DRAWING(S) - The drawing shows a circuit diagram of a graphene-based touch sensor, which implements triboelectric effect. Electrode layer (30) Triboelectric layer (40) Gate dielectric layer (50) Source electrode (60) Drain electrode (70)