▎ 摘　　要

NOVELTY - The device has a first insulating layer (120) formed on a substrate (110), and a synapse element formed on the first insulating layer. A heating element is formed between the substrate and the first insulating layer, and supplies heat to the synapse element. A zigzag shape heat generating device is formed to be buried in the first insulating layer. A program operation is performed in a high-temperature state and a read operation in a room temperature state. A source electrode (131) is provided with a protruding portion (101) protruding in an upward direction, and a drain electrode is formed on second insulating layer (132). The heat generating element is nickel-chromium, platinum, molybdenum, tantalum, tungsten, silicon carbide and graphene. The intermediate layer is yttria-stabilized zirconia, hafnium oxide and zirconium dioxide. The ion storage layer is gadolinium oxide or ceric oxide. USE - The ion-based three-terminal synapse device is useful for an ion-based three-terminal synapse array (claimed) in neuromorphic system. ADVANTAGE - The device performs program and read operations in different temperature ranges so as to improve training characteristics through improved ion movement at high temperatures and low temperature or room temperature, so that retention characteristics can be improved through reduced ion movement. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method of operating an ion-based three-terminal synapse array. DESCRIPTION OF DRAWING(S) - The drawing shows a view showing an ion-based three-terminal synapse device (Drawing includes non-English language text). 101Protruding portion 110Substrate 120First insulating layer 131Source electrode 132Second insulating layer