▎ 摘　　要

NOVELTY - A carbon-silicon carbide thin film is grown on a silicon substrate. A silica layer is deposited on the surface of carbon-silicon carbide thin film. The sample sheet is heated in a quartz tube and a carbon film is formed. The sample placed in buffering hydrofluoric acid solution and silica outside the formed window is removed. A nickel film is electron-beam-precipitated on silicon sample. The carbon-film-removed silica layer is placed on the nickel film and annealed to obtain structural graphene. USE - Preparation of structural graphene for use in microelectronic devices. ADVANTAGE - The method enables preparation of structural graphene having excellent surface smoothness and continuity, and low porosity. DETAILED DESCRIPTION - A silicon substrate of 4-12 inches is washed and placed in the reaction chamber of a chemical vapor deposition system at 10-7 mbar, and temperature is gradually increased to 900-1200 degrees C. Propane is supplied at 30 sccm and the substrate is carbonized for 5-10 minutes to grow a carbide layer. The chamber is heated to growth temperature of 1200-1300 degrees C, propane and silane are supplied, and carbon-silicon carbide (3C-SiC) thin film is heteroepitaxially grown for 30-60 minutes. The temperature is gradually decreased to room temperature under hydrogen protection and growth of carbon-silicon carbide thin film is completed. One silica layer of thickness 0.5-1 mu m is deposited on the surface of carbon-silicon carbide thin film by plasma-enhanced chemical vapor deposition. A photoresist layer is coated on the surface of mask and the shape of device window is carved on the mask, exposing the carbon-silicon carbide thin film. The sample sheet is placed in a quartz tube after opening window and heated to 700-1100 degrees C. A mixed gas of argon and chlorine is passed into the quartz tube for 3-5 minutes, and chlorine is reacted with the carbon-silicon carbide thin film to form a carbon film. The sample placed in buffering hydrofluoric acid solution and silica outside the window is removed. A nickel film is electron-beam-precipitated to a thickness of 300-500 nm on other silicon sample slice. The carbon-film-removed silica layer is placed on the nickel film and annealed in argon gas for 15-30 minutes at 900-1100 degrees C, to make the carbon film form structural graphene at the window site. The nickel film is then removed from the graphene sample.