• 专利标题:   On-chip Silicon dioxide optical waveguide integrated Graphene saturable absorber, has graphene film covered on silicon dioxide optical waveguide, where two sides of graphene film are coated on surface of substrate along Y-direction.
  • 专利号:   CN110649455-A
  • 发明人:   HU X, XIAO X, ZHANG Y, CHEN D, LI M, WANG L, FENG P, YU S
  • 专利权人:   WUHAN RES INST POSTS TELECOM, WUHAN GUANGGU INFORMATION OPTOELECTRONI
  • 国际专利分类:   H01S003/098
  • 专利详细信息:   CN110649455-A 03 Jan 2020 H01S-003/098 202007 Pages: 9 Chinese
  • 申请详细信息:   CN110649455-A CN10941092 30 Sep 2019
  • 优先权号:   CN10941092

▎ 摘  要

NOVELTY - The absorber has a substrate (1) whose upper surface is fixed with a containing groove (10) that extends to two ends of the substrate along X-direction. A silica optical waveguide (4) is located in the containing groove. The silicon dioxide optical waveguide is fixed by a cantilever (5) that is fixed at a side wall of the containing groove. Two ends of the silicon dioxide optical waveguide are connected with a light input device (2) and a light output device (3). A graphene film (6) is covered on the silicon dioxide optical waveguide. Two sides of the graphene film are coated on a surface of the substrate along Y-direction. USE - On-chip Silicon dioxide optical waveguide integrated Graphene saturable absorber. ADVANTAGE - The absorber enhances interaction force between the graphene film and an optical waveguide transmission mode, and improves saturation absorption extinction ratio. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an On-chip Silicon dioxide optical waveguide integrated Graphene saturable absorber manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a side sectional view of an on-chip silicon dioxide optical waveguide integrated graphene saturable absorber. Substrate (1) Light input device (2) Light output device (3) Silica optical waveguide (4) Cantilever (5) Graphene film (6) Containing groove (10)